Very Fast Recovery Word-line Voltage Regulator for Multilevel Nonvolatile Memories
نویسندگان
چکیده
A very fast recovery voltage regulator for large capacitive loads is presented. A feedback cascode technique is used to achieve high recovery speed when a previously discharged capacitance is connected to the regulator output. The design has been optimized for a word-line read voltage regulator for a 4-level (2-bit/cell) 32-Mcell Flash memory (64 Mbits). Computer simulations showed that recovery within a 50-mV ripple is achieved within 20 ns after a word-line is selected, as is required to allow accurate sensing without degrading memory access time. Current consumption is kept within 65 mA.
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